Search for: [Description = "A high\-frequency power amplifier used in a drain amplitude modulator must have linear dependence of output HF voltage Vo versus its supply voltage VDD. This condition essential for obtaining low\-level envelope distortions is met by a theoretical class\-E amplifier with a linear shunt capacitance of the switch. In this paper the influence of non\-linear output capacitance of the transistor in the class\-E amplifier on its Vo\(VDD\) characteristic is analyzed using PSPICE simulations of the amplifiers operating at frequencies 0.5 MHz, 5 MHz and 7 MHz. These simulations have proven that distortions of theVo\(VDD\) characteristic caused by non\-linear output capacitance of the transistor are only slight for all analyzed amplifiers, even for the 7 MHz amplifier without the external \(linear\) shunt capacitance. In contrast, the decrease of power efficiency of the class\-E amplifier resulting from this effect can be significant even by 40%."]

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