Search for: [Description = "A physical model of grain boundary influence on the piezoresistive effect of p\-type conductivity of polysilicon layers in SOI\-structures is developed. Software calculating piezoresistive properties of boron\-doped p\-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine\-grained non\-recrystallized SOI\-structures doped with boron up to 3∙10\^19cm\^\-3 only."]

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