Search for: [Description = "A steady\-state model of partially\-depleted \(PD\) SOI MOSFETs I\-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusionbased conduction in a weakly\-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the „pinch\-off” region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed."]

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