Search for: [Description = "C have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B\-doped SiGe layers have a higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane\-based epitaxy compared to As. Meanwhile, the growth of As\- or P\-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration."]

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