Search for: [Description = "Closed\-form 2D modeling of deep\-submicron and sub\-100 nm MOSFETs is explored using a conformal mapping technique where the 2D Poisson equation in the depletion regions is separated into a 1D long\-channel case and a 2D Laplace equation. The 1D solution defines the boundary potential values for the Laplacian, which in turn provides a 2D correction of the channel potential. The model has been tested for classical MOSFETs with gate lengths in the range 200\{250 nm, and for a super\-steep retrograde MOSFET with a gate length of 70 nm. With a minimal parameter set, the present modeling reproduces both qualitatively and qualitatively the experimental data obtained for such devices."]

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