Search for: [Description = "In the paper a balanced high power amplifier with class A silicon bipolar transistors for L\-band T\/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow\: output power at 1 dB compression P1 dB > 49 dBm, linear gain jS21j > 10 dB, and transmitance deviations during the RF pulse\: phase Darg\(S21\) < 0\:9Æ and DPout < 0\:2 dB."]

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