Search for: [Description = "In this work we report on the process integration of crystalline praseodymium oxide \(Pr2O3\) high\-k gate dielectric. Key process steps that are compatible with the high\-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n\+ poly\-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed."]
