Search for: [Description = "Measurements of current drive in p\-Si1\-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 um. They also show a lower knee voltage in the output I\-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch\-through stopper. For the first time, we have quantitatively explained the low\-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs."]

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