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Search for: [Description = "Methodology of electrical characterization of ISFETs has been described. It is based on a three\-stage approach. First, electrical measurements of ISFET\-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi\-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology \(IET\)."]

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Tomaszewski, Daniel Jaroszewicz, Bohdan Pijanowska, Dorota G. Grabiec, Piotr Zaborowski, Michał Yang, Chia-Ming

2007, nr 3
artykuł

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