Search for: [Description = "The paper reviews the development of the 3C\-SiC MOSFETs in a unique development project combining the material and device expertise of HAST \(Hoya Advanced Semiconductor Technologies\) and Acreo, respectively. The motivation for the development of the 3C\-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size from single cell to 3×3 mm2 large devices are reviewed. The vertical devices had hexagonal and square unit cell designs with 2 μm and 4 μm channel length. The p\-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti\/W contacts were evaluated."]

Number of results: 1