Search for: [Description = "There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas\: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBT's in silicon\-on\-insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBT's with SOI\-CMOS."]

Number of results: 1