Search for: [Description = "This paper presents a validation of the EKV3 MOSFET model under load\-pull conditions with high input power at 5.8 GHz, as well as S\-parameter measurements with low input power up to 20 GHz. The EKV3 model is able to represent coherently the large\- and small\-signal RF characteristics in advanced 90 nm CMOS technology. Multifinger devices with nominal drawn gate length of 70 nm are used."]

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