@misc{Faynot_Olivier_Special,
 author={Faynot, Olivier and Ohata, Akiko and Ritzenthaler, Romain and Cristoloveanu, Sorin},
 howpublished={online},
 publisher={Instytut Łączności - Państwowy Instytut Badawczy, Warszawa},
 language={ang},
 title={Special size effects in advanced single-gate and multiple-gate SOI transistors, Journal of Telecommunications and Information Technology, 2007, nr 2},
 type={artykuł},
 keywords={mobility models, SOI, coupling effect, thin gate oxide, multiple-gate, drain-induced virtual substrate biasing, ultra-thin silicon, gate-induced floating body effect, MOSFET},
}