@misc{Hellström_Per-Erik_Challenges,
 author={Hellström, Per-Erik and Haartman von, Martin and Östling, Mikael and Zhang, Zhen and Hallstedt, Julius and Zhang, Shili and Malm, Bengt Gunnar},
 howpublished={online},
 publisher={Instytut Łączności - Państwowy Instytut Badawczy, Warszawa},
 language={ang},
 title={Challenges for 10 nm MOSFET process integration, Journal of Telecommunications and Information Technology, 2007, nr 2},
 type={artykuł},
 keywords={sstrained silicon, silicon germanium, hafnium oxide, high-k dielectrics, mobility, low-frequency noise, nano-wire, silicon-on-insulator (SOI), metal gate},
}