@misc{Schwalke_Udo_Evaluation,
 author={Schwalke, Udo and Zaunert, Florian and Endres, Ralf and Stefanov, Yordan},
 howpublished={online},
 publisher={Instytut Łączności - Państwowy Instytut Badawczy, Warszawa},
 language={ang},
 title={Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data, Journal of Telecommunications and Information Technology, 2007, nr 2},
 type={artykuł},
 keywords={MEDICI, gadolinium oxide, praseodymium oxide, crystalline high-k gate dielectric, remote coulomb scattering, TSUPREM4, interface state density, carrier mobility, CMP, CMOS process, damascene metal gate, rare-earth oxide},
}