@misc{Parker_Evan_H._C._DC,
 author={Parker, Evan H. C. and Whall, Terence E. and König, Ulf and Känel, von Hans and Hoeck, Georg and Herzog, Hans-Joest and Myronov, Maksym and Durov, Sergiy and Hackbarth, Thomas and Mironov, Oleg A.},
 howpublished={online},
 publisher={Instytut Łączności - Państwowy Instytut Badawczy, Warszawa},
 language={ang},
 title={DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content, Journal of Telecommunications and Information Technology, 2005, nr 1},
 type={artykuł},
 keywords={SiGe, effective hole mobility, C-V, metamorphic MOSFET, LF-noise, I-V},
}