@misc{Iniguez_Benjamin_Closed-form,
 author={Iniguez, Benjamin and Fjeldly, Tor A. and Osthaug, Jarle},
 howpublished={online},
 publisher={Instytut Łączności - Państwowy Instytut Badawczy, Warszawa},
 language={ang},
 title={Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime, Journal of Telecommunications and Information Technology, 2004, nr 1},
 type={artykuł},
 keywords={leakage current, two-dimensional devicemodeling, threshold voltage, subthresholdregime, sub-100 nm MOSFET, conformal mapping},
}