@misc{Beck_Romuald_B._The,
 author={Beck, Romuald B. and Głuszko, Grzegorz and Kalisz, Małgorzata},
 howpublished={online},
 publisher={Instytut Łączności - Państwowy Instytut Badawczy, Warszawa},
 language={ang},
 title={The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma, Journal of Telecommunications and Information Technology, 2010, nr 1},
 type={artykuł},
 keywords={radio frequency reactive ion etching, current-voltagecharacteristics, capacitance-voltage characteristics, fluorine plasma, high temperature annealingprocess},
}