Tytuł:

Impact of Crosstalk into High Resistivity Silicon Substrate on the RF Performance of SOI MOSFET, Journal of Telecommunications and Information Technology, 2010, nr 4

Autor:

Raskin, Jean-Pierre ; Neve, César Roda ; Gharsallah, Ali ; Ali, Khaled Ben

Temat i słowa kluczowe:

crosstalk ; high resistivity silicon substrate ; polysilicon ; mixing products ; passivation layer

Opis:

Crosstalk propagation through silicon substrate is a serious limiting factor on the performance of the RF devices and circuits. In this work, substrate crosstalk into high resistivity silicon substrate is experimentally analyzed and the impact on the RF behavior of silicon-on-insulator (SOI) MOS transistors is discussed. The injection of a 10 V peak-to-peak single tone noise signal at a frequency of 3 MHz ( fnoisfnoise) generates two sideband tones of −56 dBm separated by fnoise from the RF output signal of a partially depleted SOI MOSFET at 1 GHz and 4.1 dBm. The efficiency of the introduction of a trap-rich polysilicon layer located underneath the buried oxide (BOX) of the high resistivity (HR) SOI wafer in the reduction of the sideband noise tones is demonstrated. An equivalent circuit to model and analyze the generation of these sideband noise tones is proposed.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2010, nr 4

Typ zasobu:

artykuł

Format:

application/pdf

Identyfikator zasobu:

ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2010.4.1101

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności