Title:

Silicon-germanium for ULSI, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Creator:

Halll, Steve ; Eccleston, Bill

Subject and Keywords:

HBT ; SiGe-CMOS ; silicon-germanium

Description:

The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described together with the latest state-of the-art results for HBT and MOSFET devices. The integration of such devices into viable HBT, BiCMOS and CMOS is reviewed. Other contributions that SiGe can make to enhance the performance of ULSI circuits are mentioned also.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2000, nr 3,4

Resource Type:

artykuł

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2000.3-4.33

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności