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Title: Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Jakubowski, Andrzej ; Łukasiak, Lidia ; Zaręba, Agnieszka

Date:

2007, nr 3

Resource Type:

artykuł

Description:

A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852 ; oai:bc.itl.waw.pl:293

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SiGe base width modulation heterojunction bipolar transistor

Object collections:

Last modified:

Jan 28, 2010

In our library since:

Jan 28, 2010

Number of object content hits:

315

All available object's versions:

https://bc.itl.waw.pl/publication/336

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Edition name Date
Zaręba, Agnieszka; Łukasiak, Lidia; Jakubowski, Andrzej, Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base, Journal of Telecommunications and Information Technology, 2007, nr 3 Jan 28, 2010

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