Advanced search ?

Object

Download

Title: Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Jakubowski, Andrzej ; Łukasiak, Lidia ; Zaręba, Agnieszka

Date:

2007, nr 3

Resource Type:

artykuł

Description:

A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:293

DOI:

10.26636/jtit.2007.3.836

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SiGe base width modulation heterojunction bipolar transistor

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Jan 28, 2010

Number of object content hits:

368

All available object's versions:

https://bc.itl.waw.pl/publication/336

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Zaręba, Agnieszka; Łukasiak, Lidia; Jakubowski, Andrzej, Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base, Journal of Telecommunications and Information Technology, 2007, nr 3 Feb 25, 2026

Objects Similar
Silicon microelectronics: where we have come from and where we are heading, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Łukasiak, Lidia Pióro, Zbigniew

2004, nr 1
artykuł
Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Łukasiak, Lidia Linkowski, Adam

2004, nr 1
artykuł
SiGe field effect transistors – performance and applications, Journal of Telecommunications and Information Technology, 2001, nr 1

Parker, Evan H. C. Whall, Terrence E.

2001, nr 1
artykuł
CVD growth of high speed SiGe HBTs using SiH4, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Landgren, Gunnar Radamson, Henry H. Grahn, Jan

2000, nr 3,4
artykuł
Silicon-germanium for ULSI, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Halll, Steve Eccleston, Bill

2000, nr 3,4
artykuł
SiGe HBT wideband amplifier for millimeter wave applications, Journal of Telecommunications and Information Technology, 2007, nr 1

Boeck, Georg Noether, Nils Krcmar, Marko

2007, nr 1
artykuł
Process and device requirements for mixed-signal integrated circuits in broadband networking, Journal of Telecommunications and Information Technology, 2004, nr 1

Iniewski, Krzysztof Voinigescu, Sorin P. Syrzycki, Marek

2004, nr 1
artykuł
Critical modeling issues of SiGe semiconductor devices, Journal of Telecommunications and Information Technology, 2004, nr 1

Selberherr, Siegfried Palankovski, Vassil

2004, nr 1
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information