Nishizaki, Ichiro ; Katagiri, Hideki ; Hayashida, Tomohiro
Subject and Keywords:silicon germanium ; modeling ; kinetics ; oxidation ; silicon
Description: Publisher:Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
Date: Resource Type: Format: DOI: ISSN: eISSN: Source:Journal of Telecommunications and Information Technology
Language: Rights Management: