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Variability of the local ΦMS values over the gate area of MOS devices, Journal of Telecommunications and Information Technology, 2005, nr 1


Przewłocki, Henryk M. ; Massoud, Hisham Z. ; Kudła, Andrzej ; Brzezińska, Danuta

Subject and Keywords:

photoelectric measurements ; mechanical stress ; MOS structure ; electrical parameters


The local value distributions of the effective contact potential difference (ECPD or the øMS factor) over thegate area of Al-SiO2-Si structures were investigated for thefirst time. A modification of the photoelectric øMS measurement method was developed, which allows determination of local values of this parameter in different parts of metaloxide-semiconductor (MOS) structures. It was found that the øMS distribution was such, that its values were highest far away from the gate edge regions (e.g., in the middle of a square gate), lower in the vicinity of gate edges and still lower in the vicinity of gate corners. These results were confirmed by several independent photoelectric and electrical measurement methods. A model is proposed of this distribution in which the experimentally determined øMS(x; y) distributions, found previously, are attributed to mechanical stress distributions in MOS structures. Model equations are derived and used to calculate øMS(x; y) distributions for various structures. Results of these calculations remain in agreement with experimentally obtained distributions. Comparison of various characteristics calculated using the model with the results of photoelectric and electrical measurements of a wide range of Al-SiO2-Si structures support the validity of the model.


Instytut Łączności - Państwowy Instytut Badawczy, Warszawa


2005, nr 1

Resource Type:




Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852


Journal of Telecommunications and Information Technology



Rights Management:

Biblioteka Naukowa Instytutu Łączności



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