Title:

Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime, Journal of Telecommunications and Information Technology, 2004, nr 1

Creator:

Iniguez, Benjamin ; Fjeldly, Tor A. ; Osthaug, Jarle

Subject and Keywords:

leakage current ; two-dimensional devicemodeling ; threshold voltage ; subthresholdregime ; sub-100 nm MOSFET ; conformal mapping

Description:

Closed-form 2D modeling of deep-submicron and sub-100 nm MOSFETs is explored using a conformal mapping technique where the 2D Poisson equation in the depletion regions is separated into a 1D long-channel case and a 2D Laplace equation. The 1D solution defines the boundary potential values for the Laplacian, which in turn provides a 2D correction of the channel potential. The model has been tested for classical MOSFETs with gate lengths in the range 200{250 nm, and for a super-steep retrograde MOSFET with a gate length of 70 nm. With a minimal parameter set, the present modeling reproduces both qualitatively and qualitatively the experimental data obtained for such devices.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2004, nr 1

Resource Type:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2004.1.227

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności