Title:

Challenges in ultrathin oxide layers formation, Journal of Telecommunications and Information Technology, 2001, nr 1

Creator:

Jakubowski, Andrzej ; Beck, Romuald B. ; Łukasiak, Lidia ; Korwin-Pawłowski, Michał

Subject and Keywords:

PECVD ; oxidation ; silicon technology ; ultrathin layers ; gateoxide ; RTO

Description:

In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the „Roadmap’2000”. Formation, however, of such layers creates a lot of technical and technological problems. The aim of this paper is to present the technological methods that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2001, nr 1

Resource Type:

artykuł

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.46

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności