Search for: [Description = "In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted \(PD\) silicon\-on\-insulator \(SOI\) MOSFETs, 120 nm dynamic threshold \(DT\) voltage – SOI MOSFETs, 50 nm FinFETs as well as long\-channel planar double gate \(DG\) MOSFETs."]

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