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Title: On-wafer wideband characterization: a powerful tool for improving the IC technologies, Journal of Telecommunications and Information Technology, 2007, nr 2

Creator:

Raskin, Jean-Pierre ; Lederer, Dimitri

Date:

2007, nr 2

Resource Type:

artykuł

Description:

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852 ; oai:bc.itl.waw.pl:269

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

MOSFET small-signal equivalent circuit extraction techniques wideband characterization silicon-on-insulator microwave frequency

Object collections:

Last modified:

Jan 22, 2010

In our library since:

Jan 22, 2010

Number of object content hits:

315

All available object's versions:

https://bc.itl.waw.pl/publication/311

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Edition name Date
Lederer, Dimitri; Raskin, Jean-Pierre, On-wafer wideband characterization: a powerful tool for improving the IC technologies, Journal of Telecommunications and Information Technology, 2007, nr 2 Jan 22, 2010

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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