Search for: [Description = "Over the last decade there has been a significant amount of research dedicated to finding a suitable high\-k\/metal gate stack to replace conventional SiON\/poly\-Si electrodes. Materials innovations and dedicated engineering work has enabled the transition from research lab to 300 mm production a reality, thereby making high\-k\/metal gate technology a pathway for continued transistor scaling. In this paper, we will present current status and trends in rare earthbased materials innovations\; in particular Gd\-based, for the high\-k\/metal gate technology in the 22 nm node. Key issues and challenges for the 22 nm node and beyond are also highlighted."]

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