Advanced search ?

Object

Download

Title: Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond, Journal of Telecommunications and Information Technology, 2009, nr 4

Creator:

Mitrovic, Ivona Z. ; Hall, Stephen

Date:

2009, nr 4

Resource Type:

artykuł

Description:

Over the last decade there has been a significant amount of research dedicated to finding a suitable high-k/metal gate stack to replace conventional SiON/poly-Si electrodes. Materials innovations and dedicated engineering work has enabled the transition from research lab to 300 mm production a reality, thereby making high-k/metal gate technology a pathway for continued transistor scaling. In this paper, we will present current status and trends in rare earthbased materials innovations; in particular Gd-based, for the high-k/metal gate technology in the 22 nm node. Key issues and challenges for the 22 nm node and beyond are also highlighted.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852 ; oai:bc.itl.waw.pl:473

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

interfacial layer lanthanides gadolinium silicate rare earth oxides

Object collections:

Last modified:

Mar 8, 2010

In our library since:

Mar 8, 2010

Number of object content hits:

699

All available object's versions:

https://bc.itl.waw.pl/publication/531

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Mitrovic, Ivona Z.; Hall, Stephen, Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond, Journal of Telecommunications and Information Technology, 2009, nr 4 Mar 8, 2010

Objects Similar
Review and perspective of high-k dielectrics on silicon, Journal of Telecommunications and Information Technology, 2007, nr 2

Davey, William M. Lu, Yi Mitrovic, Ivona Z. Buiu, Octavian Hall, Stephen

2007, nr 2
artykuł
Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers, Journal of Telecommunications and Information Technology, 2010, nr 1

Mitrovic, Ivona Z. Hall, Stephen Engström, Olof Schmidt, Mathias Piscator, Johan Raeissi, Bahman Gottlob, Heinrich D. B. Hurley, Paul K. Cherkaoui, Karim

2010, nr 1
artykuł
Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1

Buiu, Octavian Hall, Stephen Ashburn, Peter Groot de, Kees

2004, nr 1
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information