Search for: [Description = "Properties of Al electric contacts to Si\(p\) surface exposed to fluorine\-based plasma etching of nanocrystalline cubic boron nitride \(c\-BN\) _lm grown previously were studied and compared to the properties of Al contacts fabricated on pristine or dry etched surface of Si\(p\) wafers. In addition, a part of the investigated samples was annealed in nitrogen atmosphere at the temperature of 673 K. Analysis of contract properties is based on current\-voltage \(I\-V\) measurements of the produced Al\-Si structures. The presented investigations were performed in order to evaluate the efficiency of the applied plasma etching method of nanocrystalline c\-BN from the viewpoint of its influence on the properties of metal contacts formed subsequently and thus on the performance of electronic devices involving the use of boron nitride."]

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