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Title: Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN lm, Journal of Telecommunications and Information Technology, 2005, nr 1

Creator:

Szmidt, Jan ; Werbowy, Aleksander ; Firek, Piotr ; Olszyna, Andrzej R.

Date:

2005, nr 1

Resource Type:

artykuł

Description:

Properties of Al electric contacts to Si(p) surface exposed to fluorine-based plasma etching of nanocrystalline cubic boron nitride (c-BN) _lm grown previously were studied and compared to the properties of Al contacts fabricated on pristine or dry etched surface of Si(p) wafers. In addition, a part of the investigated samples was annealed in nitrogen atmosphere at the temperature of 673 K. Analysis of contract properties is based on current-voltage (I-V) measurements of the produced Al-Si structures. The presented investigations were performed in order to evaluate the efficiency of the applied plasma etching method of nanocrystalline c-BN from the viewpoint of its influence on the properties of metal contacts formed subsequently and thus on the performance of electronic devices involving the use of boron nitride.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:367

DOI:

10.26636/jtit.2005.1.289

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

electric contacts cubic boron nitride plasma etching

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Mar 1, 2010

Number of object content hits:

203

All available object's versions:

https://bc.itl.waw.pl/publication/417

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Edition name Date
Firek, Piotr; Werbowy, Aleksander; Szmidt, Jan; Olszyna, Andrzej R., Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN lm, Journal of Telecommunications and Information Technology, 2005, nr 1 Feb 25, 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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