Search for: [Description = "This paper presents for the first time the results of charge\-pumping \(CP\) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si\-SiO2 interface fabricated in a non\-standard process. Flat\-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold\-voltage values obtained from CP and I\-V measurements is observed."]

Number of results: 1