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Title: Charge-pumping characterization of FILOX vertical MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Ashburn, Peter ; Głuszko, Grzegorz ; Łukasiak, Lidia ; Gili, Enrico

Date:

2007, nr 3

Resource Type:

artykuł

Description:

This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852 ; oai:bc.itl.waw.pl:290

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

MOSFET vertical MOSFET interface traps FILOX charge-pumping, FILOX, interface traps, MOSFET, vertical MOSFET

Object collections:

Last modified:

Jan 27, 2010

In our library since:

Jan 27, 2010

Number of object content hits:

172

All available object's versions:

https://bc.itl.waw.pl/publication/333

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Edition name Date
Głuszko, Grzegorz; Łukasiak, Lidia; Gili, Enrico; Ashburn, Peter, Charge-pumping characterization of FILOX vertical MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 3 Jan 27, 2010

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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