Search for: [Description = "This study describes a novel technique to form good quality low temperature oxide \(< 350◦C\). Low temperature oxide was formed by N2O \+ SiH4\:N2 plasma in a plasma enhanced chemical vapour deposition \(PECVD\) system on the silicon surface reactively etched in CF4 plasma \(RIE – reactive ion etching\). The fabricated oxide demonstrated excellent \(for low temperature dielectric formation process\) currentvoltage \(I−V\) characteristics, such as\: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2\/Si inteface improves electrical parameters of MOS structures."]

Number of results: 1