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Title: Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma, Journal of Telecommunications and Information Technology, 2010, nr 1

Creator:

Beck, Romuald B. ; Głuszko, Grzegorz ; Kalisz, Małgorzata

Date:

2010, nr 1

Resource Type:

artykuł

Description:

This study describes a novel technique to form good quality low temperature oxide (< 350◦C). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF4 plasma (RIE – reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) currentvoltage (I−V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2/Si inteface improves electrical parameters of MOS structures.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:765 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2010.1.1058

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

radio frequency reactive ion etching current-voltagecharacteristics capacitance-voltage characteristics fluorine plasma

Object collections:

Last modified:

Aug 28, 2024

In our library since:

Oct 5, 2010

Number of object content hits:

128

All available object's versions:

https://bc.itl.waw.pl/publication/849

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Edition name Date
Kalisz, Małgorzata; Głuszko, Grzegorz; Beck, Romuald B., Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma, Journal of Telecommunications and Information Technology, 2010, nr 1 Aug 28, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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