Szukana fraza: [Opis = "This study describes the effects of high temperature annealing performed on structures fluorinated during initial silicon dioxide reactive ion etching \(RIE\) process in CF4 plasma prior to the plasma enhanced chemical vapour deposition \(PECVD\) of the final oxide. The obtained results show that fluorine incorporated at the PECVD oxide\/Si interface during RIE is very stable even at high temperatures. Application of fluorination and high temperature annealing during oxide layer fabrication significantly improved the properties of the interface \(DitmDitmb decreased\), as well as those of the bulk of the oxide layer \(Qef f decreased\). The integrity of the oxide \(higher Vbd \) and its uniformity \(Vbd distribution\) are also improved."]

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