Search for: [Description = "This work reports on changes in the properties of ultra\-thin PECVD silicon oxynitride layers after high\- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characterization methods \(C\-V, I\-V and charge\- pumping\). The XPS measurements show that SiOxNy is the dominant phase in the ultra\-thin layer and high\-temperature annealing results in further increase of the oxynitride phase up to 70% of the whole layer. Despite comparable thickness, SIMS measurement indicates a densification of the annealed layer, because sputtering time is increased. It suggests complex changes of physical and chemical properties of the investigated layers taking place during high\-temperature annealing. The C\-V curves of annealed layers exhibit less frequency dispersion, their leakage and charge\-pumping currents are lower when compared to those of as\-deposited layers, proving improvement in the gate structure trapping properties due to the annealing process."]

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