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Title: The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Jakubowski, Andrzej ; Beck, Romuald B. ; Ćwil, Michał ; Głuszko, Grzegorz ; Konarski, Piotr ; Schmeißer, Dieter ; Hoffmann, Patrick ; Mroczyński, Robert

Date:

2007, nr 3

Resource Type:

artykuł

Description:

This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characterization methods (C-V, I-V and charge- pumping). The XPS measurements show that SiOxNy is the dominant phase in the ultra-thin layer and high-temperature annealing results in further increase of the oxynitride phase up to 70% of the whole layer. Despite comparable thickness, SIMS measurement indicates a densification of the annealed layer, because sputtering time is increased. It suggests complex changes of physical and chemical properties of the investigated layers taking place during high-temperature annealing. The C-V curves of annealed layers exhibit less frequency dispersion, their leakage and charge-pumping currents are lower when compared to those of as-deposited layers, proving improvement in the gate structure trapping properties due to the annealing process.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852 ; oai:bc.itl.waw.pl:278

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

CMOS PECVD silicon oxynitride ultra-thin dielectrics

Object collections:

Last modified:

Jun 1, 2015

In our library since:

Jan 25, 2010

Number of object content hits:

334

All available object's versions:

https://bc.itl.waw.pl/publication/321

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Edition name Date
Mroczyński, Robert; Beck, Romuald B.; Jakubowski, Andrzej; Ćwil, Michał; Konarski, Piotr; Hoffmann, Patrick; Schmeißer, Dieter, The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers, Journal of Telecommunications and Information Technology, 2007, nr 3 Jun 1, 2015

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

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