Tytuł:

Development of 3C-SiC MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2

Autor:

Ericsson, Per ; Nagasawa, Hiroyuki ; Abe, Masayuki ; Strömberg, Helena ; Schöner, Adolf ; Bakowski, Mietek

Temat i słowa kluczowe:

channel mobility ; vertical MOSFET ; 3C-SiC

Opis:

The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size from single cell to 3×3 mm2 large devices are reviewed. The vertical devices had hexagonal and square unit cell designs with 2 μm and 4 μm channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2007, nr 2

Typ zasobu:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2007.2.808

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności