Development of 3C-SiC MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2
Creator:Ericsson, Per ; Nagasawa, Hiroyuki ; Abe, Masayuki ; Strömberg, Helena ; Schöner, Adolf ; Bakowski, Mietek
Subject and Keywords:channel mobility ; vertical MOSFET ; 3C-SiC
Description: Publisher:Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
Date: Resource Type: Format: Resource Identifier:ISSN 1509-4553, on-line: ISSN 1899-8852
Source:Journal of Telecommunications and Information Technology
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