Grasby, Tim J. ; Bacon, Adam R. ; Parker, Evan H. C. ; Fulgoni, Dominic J. F. ; Leadley, David R. ; Thomas, Stephen M. ; Whall, Terence E. ; Prest, Martin J.
Subject and Keywords:MOSFET ; dynamic threshold mode ; silicon germanium heterostructures ; electronic noise
Description: Publisher:Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
Date: Resource Type: Format: DOI: ISSN: eISSN: Source:Journal of Telecommunications and Information Technology
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