Selberherr, Siegfried ; Grasser, Tibor
Subject and Keywords:simulation ; interface states ; negative bias temperature instability ; defects ; semiconductor device equations ; reliability, negative bias temperature instability, modeling, simulation, hydrogen, silicon dioxide, defects, interface states, semiconductor device equations ; modeling ; hydrogen ; silicon dioxide
Description: Publisher:Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
Date: Resource Type: Format: Resource Identifier:ISSN 1509-4553, on-line: ISSN 1899-8852
Source:Journal of Telecommunications and Information Technology
Language: Rights Management: