Selberherr, Siegfried ; Grasser, Tibor
Subject and Keywords:simulation ; interface states ; negative bias temperature instability ; defects ; semiconductor device equations ; reliability, negative bias temperature instability, modeling, simulation, hydrogen, silicon dioxide, defects, interface states, semiconductor device equations ; modeling ; hydrogen ; silicon dioxide
Description: Publisher:Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
Date: Resource Type: Format: DOI: ISSN: eISSN: Source:Journal of Telecommunications and Information Technology
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