Title:

Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Jakubowski, Andrzej ; Beck, Romuald B. ; Ćwil, Michał ; Głuszko, Grzegorz ; Konarski, Piotr ; Bieniek, Tomasz

Subject and Keywords:

oxynitride ; dual gate oxide ; CMOS ; gate stack ; plasma implantation

Description:

The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2007, nr 3

Resource Type:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2007.3.819

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności