Tytuł:

Electrical characterization of ISFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Autor:

Tomaszewski, Daniel ; Jaroszewicz, Bohdan ; Pijanowska, Dorota G. ; Grabiec, Piotr ; Zaborowski, Michał ; Yang, Chia-Ming

Temat i słowa kluczowe:

characterization ; CMOS ; I-V characteristics ; ISFET ; electrical measurements ; parameters extraction

Opis:

Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2007, nr 3

Typ zasobu:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2007.3.830

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności