Title:

Characterization of SOI MOSFETs by means of charge-pumping, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Głuszko, Grzegorz ; Łukasiak, Lidia ; Gottlob, Heinrich ; Lemme, Max ; Szostak, Sławomir

Subject and Keywords:

interface traps ; electrical characterization ; charge-pumping ; SOI MOSFET

Description:

This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2007, nr 3

Resource Type:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2007.3.832

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności