Title:

Evolution and recent advances in RF/microwave transistors, Journal of Telecommunications and Information Technology, 2004, nr 1

Creator:

Schwierz, Frank ; Liou, Juin J.

Subject and Keywords:

HBT ; RF CMOS ; microwave devices ; heterostructures ; HEMT ; RF devices ; frequency limits

Description:

Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2004, nr 1

Resource Type:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2004.1.224

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności