Faynot, Olivier ; Ohata, Akiko ; Ritzenthaler, Romain ; Cristoloveanu, Sorin
Subject and Keywords:mobility models ; SOI ; coupling effect ; thin gate oxide ; multiple-gate ; drain-induced virtual substrate biasing ; ultra-thin silicon ; gate-induced floating body effect ; MOSFET
Description: Publisher:Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
Date: Resource Type: Format: Resource Identifier:ISSN 1509-4553, on-line: ISSN 1899-8852
Source:Journal of Telecommunications and Information Technology
Language: Rights Management: