Hellström, Per-Erik ; Haartman von, Martin ; Östling, Mikael ; Zhang, Zhen ; Hallstedt, Julius ; Zhang, Shili ; Malm, Bengt Gunnar
Subject and Keywords:sstrained silicon ; silicon germanium ; hafnium oxide ; high-k dielectrics ; mobility ; low-frequency noise ; nano-wire ; silicon-on-insulator (SOI) ; metal gate
Description: Publisher:Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
Date: Resource Type: Format: DOI: ISSN: eISSN: Source:Journal of Telecommunications and Information Technology
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