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Title: Special size effects in advanced single-gate and multiple-gate SOI transistors, Journal of Telecommunications and Information Technology, 2007, nr 2

Creator:

Faynot, Olivier ; Ohata, Akiko ; Ritzenthaler, Romain ; Cristoloveanu, Sorin

Date:

2007, nr 2

Resource Type:

artykuł

Description:

State-of-the-art SOI transistors require a very small body. This paper examines the effects of body thinning and thin-gate oxide in SOI MOSFETs on their electrical characteristics. In particular, the influence of film thickness on the interface coupling and carrier mobility is discussed. Due to coupling, the separation between the front and back channels is difficult in ultra-thin SOI MOSFETs. The implementation of the front-gate split C-V method and its limitations for determining the front- and back-channel mobility are described. The mobility in the front channel is smaller than that in the back channel due to additional Coulomb scattering. We also discuss the 3D coupling effects that occur in FinFETs with triple-gate and omega-gate configurations. In low-doped or tall fins the corner effect is suppressed. Narrow devices are virtually immune to substrate effects due to a strong lateral coupling between the two lateral sides of the gate. Short-channel effects are drastically reduced when the lateral coupling screens the drain influence.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:248

DOI:

10.26636/jtit.2007.2.804

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

mobility models SOI coupling effect thin gate oxide multiple-gate drain-induced virtual substrate biasing ultra-thin silicon gate-induced floating body effect MOSFET

Object collections:

Last modified:

Jul 23, 2024

In our library since:

Jan 8, 2010

Number of object content hits:

660

All available object's versions:

https://bc.itl.waw.pl/publication/283

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Edition name Date
Ohata, Akiko; Ritzenthaler, Romain; Faynot, Olivier; Cristoloveanu, Sorin, Special size effects in advanced single-gate and multiple-gate SOI transistors, Journal of Telecommunications and Information Technology, 2007, nr 2 Jul 23, 2024

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