Tytuł:

Charge-pumping characterization of FILOX vertical MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Autor:

Ashburn, Peter ; Głuszko, Grzegorz ; Łukasiak, Lidia ; Gili, Enrico

Temat i słowa kluczowe:

MOSFET ; vertical MOSFET ; interface traps ; FILOX ; charge-pumping, FILOX, interface traps, MOSFET, vertical MOSFET

Opis:

This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2007, nr 3

Typ zasobu:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2007.3.833

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności