Title:

Gate dielectrics: process integration issues and electrical properties, Journal of Telecommunications and Information Technology, 2005, nr 1

Creator:

Schwalke, Udo

Subject and Keywords:

high-k dielectrics ; CMOS ; Pr2O3 ; wet chemical cleaning ; RIE ; process integration ; wet chemical etching ; resist removal

Description:

In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n+ poly-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2005, nr 1

Resource Type:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2005.1.298

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności